New Product
SiR406DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
25
R DS(on) ( Ω )
0.0038 at V GS = 10 V
0.0048 at V GS = 4.5 V
I D (A) a
40 g
40 g
Q g (Typ.)
15.8 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Gen III Power MOSFET
? 100 % R g Tested
? 100 % Avalanche Tested
PowerPAK? SO-8
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
6.15 mm
1
S
2
S
S
5.15 mm
? POL
? Server
D
D
3
4
G
? DC/DC
8
7
D
6
D
5
D
G
Bottom View
Ordering Information: SiR406DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
25
± 20
40 g
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
40 g
27 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
21.6 b, c
70
40 g
4.5 b, c
30
45
A
mJ
T C = 25 °C
48
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
31
5.0 b, c
W
T A = 70 °C
3.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f t ≤ 10 s
Maximum Junction-to-Case (Drain) Steady State
R thJA
R thJC
20 25
2.1 2.6
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Package Limited.
Document Number: 64982
S09-1095-Rev. A, 15-Jun-09
www.vishay.com
1
相关PDF资料
SIR414DP-T1-GE3 MOSFET N-CH D-S 40V 8-SOIC
SIR418DP-T1-GE3 MOSFET N-CH D-S 40V PPAK 8SOIC
SIR436DP-T1-GE3 MOSFET N-CH D-S 25V PPAK 8SOIC
SIR440DP-T1-GE3 MOSFET N-CH 20V 60A PPAK 8SOIC
SIR462DP-T1-GE3 MOSFET N-CH 30V 30A PPAK 8SOIC
SIR464DP-T1-GE3 MOSFET N-CH 30V 50A PPAK 8SOIC
SIR468DP-T1-GE3 MOSFET N-CH 30V 40A PPAK 8SOIC
SIR470DP-T1-GE3 MOSFET N-CH 40V 60A PPAK 8SOIC
相关代理商/技术参数
SIR408DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET
SIR408DP-T1-GE3 功能描述:MOSFET 25 Volts 21.5 Amps 4.8 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR410DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SIR410DP-T1-GE3 功能描述:MOSFET 20V 35A 36W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR412DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET
SIR412DP-T1-GE3 功能描述:MOSFET 25V 20A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR414DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET
SIR414DP-T1-GE3 功能描述:MOSFET 40V 50A 83W 2.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube